Title : Device Physics & Applications based on Transition Metal Dichalcogenides Thin-Film Transistors
Date / Time : 4 Oct, 2022 / 5:00 P.M
Speaker : Hong Young Ki(Gyeongsang Univ.)
Abstract : Transition metal dichalcogenides (TMDs) with two-dimensional layered structures exhibit fascinating physical properties, in terms of high carrier mobilities, tunable energy band structures, wide spectral responses and mechanical flexibilities, etc. depending on number of the unit van der Waals layer. In this presentation, I will present various optoelectronic applications, for examples transparent, flexible, and photo-sensing devices based on multilayered TMDs as active components of thin-film transistors (TFTs).
First, I present device performances and optical properties of transparent TFTs with respect to Schottky contact between TMDs active layers and transparent conducting oxides source/drain electrodes. In order to improve performances of the transparent TFT, a couple of strategies for tuning the Schottky barrier will be introduced. Second, novel process architecture is demonstrated for realizing flexible TFTs with high device performances as well as robust tolerances against mechanical stresses, which are accomplished by using solution-based polyimide as flexible substrate, pulsed laser-treated silver nanowires network as gate electrode, and hybrid organic-inorganic double layer as gate insulator. Finally, I show two distinctive TMDs phototransistors exhibiting superior photo-responsivity, which can be explained by device structures and active material’s properties, respectively.